Charging damage during residual metal overetching
نویسندگان
چکیده
The influence of electron and ion temperatures on charging damage during residual metal ~latent antenna! overetching in high-density plasmas is investigated by Monte Carlo simulations. The tunneling current through a thin gate oxide, electrically connected to the antenna, increases significantly with electron temperature, mainly as a result of changes in plasma current and ion energy distribution. However, the current decreases with ion temperature as ion shading: ~a! directly decreases the ion flux to the antenna and ~b! neutralizes the negative charge at the upper mask sidewalls, thus allowing more electrons to enter the pattern. The role of exposed antenna areas ~trench bottoms and perimeter! is examined from the perspective of current imbalance. © 1999 American Institute of Physics. @S0003-6951~99!02407-9#
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